1650°C Pressureless Sintered Silicon Carbide (SSiC) Saggers
Custom high-temperature solutions engineered for peak performance in demanding thermal processing applications.
Our pressureless sintered silicon carbide (SSiC) saggers are engineered for peak performance in the most demanding high-temperature environments. Utilizing advanced forming processes—including isostatic pressing, slip casting, and dry pressing—we deliver custom-shaped components that ensure exceptional durability and thermal stability for your critical thermal processing applications.
Key Industries Served
Saggers play a critical role in kiln operations, serving as high-temperature vessels that ensure the safe transit and structural integrity of valuable products during firing processes.
- Lithium-Ion Battery Production: Ideal for cathode powder calcination
- Advanced Ceramics: Reliable performance for sintering technical ceramics
- Metallurgy & Heat Treatment: Robust solutions for metal purification and processing
- Electronics & Semiconductor: Precision saggers for wafer handling
- Glass & Photovoltaics: Consistent performance in glass manufacturing
Why Choose Our SSiC Saggers?
| Feature |
Benefit |
| High Mechanical Strength |
Withstands heavy loading and mechanical stress at high temperatures |
| Exceptional Thermal Shock Resistance |
Maintains integrity through rapid temperature changes (>350°C) |
| Superior Corrosion Resistance |
Excellent resistance to acids, alkalis, and harsh atmospheres |
| Extended Service Life |
Reduces downtime and replacement frequency, lowering long-term costs |
| Customizable Designs |
Tailored dimensions, shapes (round/square), and structures to fit your kiln |
Technical Specifications: Pressureless Sintered SiC (SSiC)
| Property |
Value / Performance |
| Max. Service Temperature (in air) |
1650 °C |
| Density |
≥ 3.06 g/cm³ |
| Flexural Strength (@ 20 °C) |
320 - 400 MPa |
| Thermal Conductivity (@ 20 °C) |
196 W/(m*K) |
| Coefficient of Thermal Expansion |
4.0 x 10⁻⁶/K |
| Hardness (HV1) |
2350 kg/mm² |
Material Comparison: SSiC vs. Alternatives
| Material |
Max Temp |
Thermal Shock |
Oxidation Resistance |
Key Advantage |
| Pressureless Sintered SiC (SSiC) |
1650 °C |
Excellent |
Excellent |
Superior all-around performance |
| Alumina (Al₂O₃) |
1800°C |
Poor |
Excellent |
High max temp, but brittle |
| Graphite |
3000°C |
Good |
Poor (requires atmosphere) |
Best conductivity, but oxidizes |
| Reaction-Bonded SiC (RB-SiC) |
1380°C |
Good |
Good |
Cost-effective for lower temps |
Our Customization Services
We provide tailored solutions to meet your exact needs:
- Dimensional Customization: Round or square configurations; flat, semi-flat, or spherical bases
- Structural Modifications: Flange additions, precision drilling, and other custom features
Material Recommendations
Primary Choice (SSiC): For high-temperature applications (>1380°C) requiring superior corrosion resistance, mechanical strength, and thermal shock resistance. Perfect for lithium battery materials and advanced ceramics.
Cost-Effective Alternative (RB-SiC): For applications under 1380°C where cost is a primary driver.
Alumina (Al₂O₃): Suitable for very high temperatures (up to 1800°C) in stable, non-thermal-shock environments.
